Simulations of 3-D domain wall structures in thin films

Xiao-Ping Wang; Ke Wang; Weinan E

doi:10.3934/dcdsb.2006.6.373

Article Contents

2006, Volume 6, Issue 2: 373-389. Doi: 10.3934/dcdsb.2006.6.373

This issue Previous Article On electro-kinetic fluids: One dimensional configurations Next Article A variational construction of anisotropic mobility in phase-field simulation

Simulations of 3-D domain wall structures in thin films

1.
Department of Mathematics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
2.
Department of Mathematics, Princeton University, Princeton, N.J. 08544

Received: September 2005

Revised: September 2005

Published: March 2006

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Abstract

Using the Gauss-Seidel projection method developed in [4] and [17], we simulate the three dimensional domain wall structures for thin films at various thickness. We observe transition from Néel wall to cross-tie wall and to Bloch wall as the thickness is increased. Periodic structures for cross-tie wall are also studied. The results are in good agreement with the experimental observations. Hysteresis loops are calculated for samples of various sizes. In particular, we study the effect of cross-tie wall in the switching process. These simulations have demonstrated high efficiency of the Gauss-Seidel projection method.

Keywords:

Magnetic domain wall,
Gauss-Seidel projection method.

Mathematics Subject Classification: Primary: 35Q99,65Z05; Secondary: 65M06.

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