# American Institute of Mathematical Sciences

March  2015, 8(1): 117-151. doi: 10.3934/krm.2015.8.117

## Stability of the stationary solution of the cauchy problem to a semiconductor full hydrodynamic model with recombination-generation rate

 1 School of Mathematics and Statistics, Northeast Normal University, Changchun, MO 130024

Received  July 2014 Revised  August 2014 Published  December 2014

We study the Cauchy problem of a 1-D full hydrodynamic model for semiconductors where the energy equations are included. In the case of recombination-generation effects between electrons and holes being taken into consideration, the existence and uniqueness of a subsonic stationary solution of the related system are established. The convergence of the global smooth solution to the stationary solution exponentially is proved as time tends to infinity.
Citation: Haifeng Hu, Kaijun Zhang. Stability of the stationary solution of the cauchy problem to a semiconductor full hydrodynamic model with recombination-generation rate. Kinetic & Related Models, 2015, 8 (1) : 117-151. doi: 10.3934/krm.2015.8.117
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