Stability of the stationary solution of the cauchy problem to a semiconductor full hydrodynamic model with recombination-generation rate

Haifeng Hu; Kaijun Zhang

doi:10.3934/krm.2015.8.117

Article Contents

2015, Volume 8, Issue 1: 117-151. Doi: 10.3934/krm.2015.8.117

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Stability of the stationary solution of the cauchy problem to a semiconductor full hydrodynamic model with recombination-generation rate

Haifeng Hu^1, and
Kaijun Zhang^1,

1.
School of Mathematics and Statistics, Northeast Normal University, Changchun, MO 130024

Received: June 30, 2014

Revised: July 31, 2014

Published: February 2015

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Abstract

We study the Cauchy problem of a 1-D full hydrodynamic model for semiconductors where the energy equations are included. In the case of recombination-generation effects between electrons and holes being taken into consideration, the existence and uniqueness of a subsonic stationary solution of the related system are established. The convergence of the global smooth solution to the stationary solution exponentially is proved as time tends to infinity.

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Mathematics Subject Classification: 35B40, 82D37, 35M31.

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